In August, SK Hynix was the first in the world to announce a 321-layer stacked NAND flash memory, breaking through 300 layers for the first time, but it will not be mass-produced until the first half of 2025. Samsung, which has always been the leader in storage, cannot sit still, because the 9th generation V-NAND flash memory originally planned to be mass-produced in 2024 only has about 280 layers, and the 10th generation in 2025-2026 will break through to more than 430 layers.
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Being overtaken is obviously something Samsung cannot tolerate. Jung-bae Lee, president of Samsung Electronics' storage business, recently revealed that the 9th generation V-NAND is progressing smoothly and will be mass-produced early next year. It is based on a dual-stack architecture and has reached the highest number of stacking layers in the industry.
Jung-BaeLee noted: "In the coming era of sub-10nm DRAM and 1,000-layer vertical V-NAND, new structural and material innovations are crucial. Therefore, we are developing three-dimensional stacking structures and new materials for DRAM while increasing the number of layers, reducing height, and maximizing the Dramatically reduce cell interference. The ninth V-NAND, planned for launch in 2024, will use 11nm-class DRAM. In addition, the blog post also reiterated its commitment to CXL memory modules (CMM) that will support the composable infrastructure of next-generation systems, especially high-capacity solid-state drives using V-NAND.
He did not disclose the specific number of layers, but it has been said before that it will be increased to more than 300 layers. It is hard to say whether it can exceed SK Hynix's 321 layers, but at least it will be a new high in the near future. Obviously, Samsung has put more emphasis on the 9th generation flash memory.