Samsung officially launched next-generation memory technologies including HBM3E, GDDR7, LPDDR5xCAMM2, etc. at its 2023 Memory Technology Day. We have already reported on the development of Samsung's HBM3E memory, codenamed "ShineBolt", and GDDR7 for next-generation artificial intelligence, gaming and data center applications. These can be seen as the two highlights of Memory Technology Day 2023, but Samsung definitely has more actions in store.

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Samsung HBM3E "Shinebolt" memory for artificial intelligence and data centers

Building on Samsung's expertise in commercializing the industry's first HBM2 in 2016 and opening the HBM market for high-performance computing (HPC), the company today released its next-generation HBM3 EDRAM called Shinebolt. Samsung’s Shinebolt will power next-generation AI applications, improve total cost of ownership (TCO), and accelerate AI model training and inference in data centers.

The HBM3E has speeds of up to 9.8 gigabits per second (Gbps) per pin, which means it can achieve transfer rates of over 1.2 terabytes per second (TBps). To achieve higher layer stacking and improve thermal characteristics, Samsung has optimized its Non-Conductive Film (NCF) technology to eliminate gaps between chip layers and maximize thermal conductivity. Samsung’s 8H and 12HHBM3 products have now entered mass production, and Shinebolt samples have also been delivered to customers.

Leveraging its strengths as a total semiconductor solution provider, the company also plans to provide customized delivery services that combine next-generation HBM, advanced packaging technology and foundry products.

Suitable for next-generation gaming graphics cardsSamsung GDDR7-32Gbps and 32GbDRAM

Other products highlighted at the meeting include the industry's highest-capacity 32GbDDR5DRAM, the industry's first 32Gbps GDDR7, and PBSSD, which can significantly improve the storage capabilities of server applications.

According to Samsung, compared with the current fastest 24Gbps GDDR6DRAM, GDDR7 memory will improve performance by 40% and energy efficiency by 20%, with chip capacity up to 16Gb. The first batch of products have a rated transmission speed of 32Gbps, which is 33% higher than GDDR6 memory, while achieving a bandwidth of 1.5TB/s on a 384-bit bus interface solution.

Here is the bandwidth provided by 32Gbps pin speed in various bus configurations:

512-bit-2048GB/sec (2.0TB/sec)

384-bit - 1536GB/sec (1.5TB/sec)

320-bit-1280GB/sec (1.3TB/sec)

256-bit-1024GB/sec (1.0TB/sec)

192-bit-768GB/sec

128bit-512GB/sec

The company has also tested early samples running at speeds up to 36Gbps, but we doubt these will be produced in large quantities to meet the demand for next-generation gaming and AI GPUs.

The energy efficiency of GDDR7 video memory will also be improved by 20%, which is undoubtedly a good thing considering the huge power consumption of high-end GPUs by video memory. It is reported that Samsung GDDR7 DRAM will include technology optimized for high-speed workloads and will also provide low operating voltage options, designed for power-conscious applications such as notebook computers. In terms of heat dissipation, the new memory standard will use epoxy molding compound (EMC) with high thermal conductivity, which can reduce thermal resistance by up to 70%. It was reported back in August that Samsung provided GDDR7 DRAM samples to NVIDIA for early evaluation of next-generation gaming graphics cards.

for next generation CAMM2 modulesSamsungLPDDR5xSimplify mobile design

To handle data-intensive tasks, today’s AI technologies are moving towards a hybrid model that distributes and distributes workloads between cloud and edge devices. Therefore, Samsung has launched a series of memory solutions that support high performance, large capacity, low power consumption and small form factor for edge devices.

In addition to the industry's first 7.5Gbps LPDDR5XCAMM2, which promises to be a true game-changer in the next-generation PC and laptop DRAM market, the company also demonstrated 9.6Gbps LPDDR5XDRAM, LLWDRAM dedicated for on-device artificial intelligence, next-generation universal flash memory (UFS), and the BM9C1, a high-capacity quad-level cell (QLC) SSD for PCs.