Memory manufacturer SK Hynix has announced the world's first 321-layer UFS 4.1 TLC NAND flash memory for smartphones, which is faster, more efficient and smaller, making it ideal for next-generation mobile phones that focus on thin and light bodies and AI tools.
These new memory chips offer 15% faster random read speeds and 40% faster random write speeds compared to the previous generation launched in 2022, which featured a 238-layer design. For sequential reads, its interface can reach speeds up to 4.3GB/s.
In addition to this, NAND package thickness has been reduced from 1 mm to 0.85 mm. That may not sound like much, but if a phone like the Galaxy S25 Edge catches on, every little improvement will pay dividends.
Adding to recent trends, the new 321-layer UFS 4.1 design is 7% more energy efficient than the previous generation – less heat and higher performance are always a trend.
SK Hynix says sequential read speeds will improve on-device AI performance (as it will speed up loading models into RAM), while improved random performance will facilitate multitasking.
The company will offer the storage product in two capacities - 512GB and 1TB. Yes, there won't be a 256GB version, so that's something to be aware of when choosing your next phone (just like the 128GB model now uses UFS 3.1).
SK Hynix said it expects the product to win orders from smartphone manufacturers this year and begin mass shipments in the first three months of next year. Not just smartphones, the company is also working on designing 321-layer SSDs for consumers and data centers.