Samsung flash memory chips enter the 3D transistor era for the first time: lower power consumption and smaller size

Since Intel first introduced Finfet transistors at the 22nm process node, logic technology has officially entered the 3D era. Now Samsung is also going to launch 3D transistor technology on flash memory chips. FinFET is a 3D structure transistor. Its structure is similar to a shark fin, hence the name fin transistor. Compared with traditional 2D planar transistors, FinFET has many advantages. Intel was the first to use it at the 22nm node, and TSMC and Samsung followed up at the 14/16nm node. It is now the basic structure of advanced technology.

Due to different structures, memory chips have still used traditional 2D transistor structures for many years. At the SEDEX 2025 conference, Song Jae-hyuk, chief technology officer of Samsung's DS equipment department, delivered a keynote speech.Mentioned that in order to achieve the performance and energy efficiency expected by customers, more transistors need to be stacked per unit area, and 3D FinFET is one of the core innovation technologies.

Samsung's statement means that it will use 3D transistor technology in NAND flash memory chips for the first time in the industry, further significantly increasing the storage density and performance of flash memory.

After flash memory uses 3D transistors,Samsung cited numerous benefits, including improved signal transmission speeds, lower power consumption, smaller size, and more.

However, Samsung's statement is still technical. It has not yet been determined which flash memory will use 3D transistor technology, and commercialization has to wait.