At the 69th IEEE International Electronic Devices Conference (IEDM), Xin, the director of the largest domestic storage factory, brought an article saying that he had made a breakthrough in technology and could handle 3nm technology chips. Judging from the paper published by Changxin, this demonstrates its breakthrough in Gate-All-Around (GAA) technology, which can be used on 3nm process chips, and of course can also handle 5nm, 7nm, 10nm and 14nm.
Due to equipment process control, Changxin is not yet able to produce and manufacture, but this paper has shown that they have this technical strength, and this is a microcosm of the independent breakthrough of domestic chips.
Prior to this, Changxin Memory officially launched a series of LPDDR5 products, including 12Gb LPDDR5 particles, POP packaged 12GBLPDDR5 chips and DSC packaged 6GBLPDDR5 chips.
Changxin Storage is also the first domestic brand to launch self-developed and produced LPDDR5 products, achieving zero breakthrough in the domestic market.
The LPDDR5 chip is the fifth generation of ultra-low power double-rate dynamic random access memory. Compared with the previous generation LPDDR4X, the capacity and speed of a single particle of Changxin Storage LPDDR5 are increased by 50%, reaching 12Gb and 6400Mbps respectively, while the power consumption is reduced by 30%.