At a time when global memory prices continue to soar,News of a low-price strategy from Chinese DRAM giant Changxin Memory has plunged the already restless memory market into a fierce battle between long and short.According to reports,Changxin Memory launched a "breaking price" of US$138 for 32GB DDR4-3200 ECC memory modules. This price is only about one-third of the current international market price of US$300 to US$400, which instantly caused a shock in the global market.
This low-price move directly ignited panic in the market, and investors worried that the memory industry would once again fall into red ocean competition. The memory sector, which had rebounded in early trading on the 3rd, immediately fell under pressure.
Among them, DRAM duo Winbond and Nanya bore the brunt, plunging 9.05% and 5.61% respectively that day. In addition, stocks such as Phison, Pingan, Jinghaoke, Supreme, ADATA, Apacer and Huadong all fell by more than half the limit, creating a strong atmosphere of panic in the sector.
Behind this market fluctuation are structural changes in the global memory market. With the explosive growth of AI computing demand, the global memory market has entered a new super cycle. The prices of related products have risen sharply by the end of 2025, even disrupting the production layout of many electronic products in 2026.
Against this background, major Chinese storage companies such as Changxin Storage and Yangtze River Storage are accelerating their layout and seizing market opportunities.
Changxin Storage, which has been particularly aggressive in expanding production, has decided to accelerate the expansion of its Shanghai plant. According to the plan, the scale of the factory will be 2 to 3 times that of the Hefei headquarters, and it will mainly focus on the production of DRAM products required for servers, personal computers and automotive electronics.
According to the timetable, the equipment installation in the Shanghai plant is expected to start in the second half of 2026 and officially enter the production stage in 2027. After the production is put into production, it will significantly enhance Changxin Memory’s supply capacity in the global DRAM market.
Chinese NAND Flash giant Yangtze Memory is also making efforts simultaneously. Its Phase III project in Wuhan, which was originally scheduled to reach its mass production target in 2027, is expected to start in the second half of 2026. What is even more noteworthy is that Yangtze Memory plans to adjust its development strategy and shift about 50% of the new plant's production capacity to DRAM product production, officially opening a new model of parallel development in the dual fields of NAND and DRAM, and further improving the product matrix of China's storage industry.
Regarding the rise of Chinese storage manufacturers and changes in the market structure, Gary Huang, head of Asia at Yole Group, analyzed that the current global memory supply continues to be tight, and this market environment has created favorable development opportunities for emerging players.
Coupled with China's policy support, it is driving more customers to actively seek alternative sources of supply. This not only brings new growth momentum to Chinese manufacturers such as Changxin Memory and Yangtze Memory, but will also profoundly affect the competitive landscape of the global memory market.
