Yangtze Memory’s market share exceeded 13%. Major Korean manufacturers issued a warning: China’s pursuers are coming.

Yangtze Memory's global NAND flash memory market share has jumped from 8% in the same period in 2025 to 13%. Major manufacturers such as South Korea's Samsung and SK Hynix have officially issued warnings, saying that Chinese storage manufacturers are catching up faster than expected.According to the latest report from market research firm Counterpoint Research, Yangtze Memory has become the fastest growing manufacturer in the global NAND market. Industry insiders in South Korea believe that the rapid expansion of its technology and production capacity is directly threatening the market positions of Samsung and SK Hynix.

Public information shows that Samsung ranks first in the global NAND market with a revenue share of 29%, SK Hynix ranks second with 18%, and Yangtze Memory ranks fourth.

Yangtze Memory has maintained double-digit growth for three consecutive quarters. In the first quarter of 2026, its revenue reached US$2.6 billion, a year-on-year increase of nearly 445%, and the growth rate far exceeded the global industry average.

The vigilance of Korean manufacturers stems from Yangtze Storage's all-round market offensive. Yangtze Memory has recently officially entered the Korean domestic market and launched the Zhitai brand consumer-grade solid-state drive, directly impacting the home market of the Korean duo.

At the technical level, the Xtacking architecture independently developed by Yangtze Memory has achieved mass production of 294-layer 3D NAND, with a yield rate of over 90%. The technological gap with Samsung's 286-layer and SK Hynix's 321-layer mass-produced products has been significantly narrowed.

Capacity expansion is being promoted simultaneously. Yangtze Memory's third NAND factory in Wuhan is scheduled to be put into production at the end of 2026 and will be fully mass-produced in 2027. The company also announced that it will build two new factories.

Korean brokerage analysis pointed out that Yangtze Memory's rapid catch-up in the NAND field has become a key variable affecting the sustainability of the global memory super cycle, and the Korean duo need to adjust their strategies to deal with the challenge.