According to Korean media reports, China's storage industry is developing rapidly, and they are surprised by the speed of catching up. The report stated thatWith the support of relevant policies, China's storage industry has made great progress. In terms of NAND flash memory, the technology gap with leading companies such as Samsung and SK Hynix has been shortened to 2 years.
In the view of Korean experts, this is a dangerous signal because Chinese companies are progressing too quickly.
In their view, although NAND technical barriers are relatively low, the progress of Chinese manufacturers still exceeds outside expectations, while Korean companies still maintain a technology gap of more than 5 years in the DRAM field, but they should be more careful about being overtaken.
Information previously released by the U.S. Northern District Court of California shows that on November 9, Yangtze Memory sued Micron Technology and its wholly-owned subsidiary Micron Consumer Products Group Co., Ltd. for infringement of its U.S. patents.
Yangtze Memory mentioned in the indictment that Micron used Yangtze Memory’s patented technology to resist competition from Yangtze Memory and gain and protect market share.
This also directly demonstrates the rapid progress of Chinese manufacturers in NAND flash memory.