SKhynix confirmed in a blog post that it will begin developing the next generation of HBM4 high-bandwidth memory in 2024. So far, we've seen Micron and Samsung list their next-generation HBM4 memory products while also confirming this development. Both companies have highlighted release time frames around 2025-2026. According to the latest confirmation from SKhynix, the company has also announced plans to start producing next-generation high-bandwidth memory in 2024.
When talking about HBM products, senior manager Kim Wang-soo emphasized that the company will mass-produce its own HBM3E solution in 2024, which is an enhanced variant of the existing HBM3 memory. The new memory will provide higher speed and capacity. But in the same year, SKhynix also plans to initiate the development of HBM4 memory, which will mark an important step in the continued evolution of the HBM product stack.
The competitive advantage will continue next year. Kim Wang-soo, head of the GSM team, said: "With the mass production and sales of HBM3E planned next year, our market advantages will be maximized again. As the development work of the follow-up product HBM4 will also be in full swing, SKHynix's HBM will enter a new stage next year. This will be a year worth celebrating for us."
Since development is scheduled for 2024, we can expect actual products featuring this memory module to be available by the end of 2025 or 2026. A roadmap recently shared by Trendforce predicts that the first HBM4 samples will have 36GB per stack capacity, with full specifications expected to be released by JEDEC around the second half of 2024-2025. First customer samples and availability are expected in 2026, so there's still a lot of time before we see the new high-bandwidth memory solution in action.
With a 36GB stack, the product is available in 288GB capacities, with higher capacities planned. The maximum speed of HBM3E memory has reached 9.8Gbps, so we can expect HBM4 to be the first to break the double-digit mark above 10Gbps. As for products, NVIDIA's Blackwell is expected to use HBM3E memory modules, so it will be Blackwell's successor (possibly named after Vera Rubin) or its upgrade, like the Hopper H200 (HBM3E), the first to use HBM4.