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[Silicon-doped aluminum gallium oxide thin film conductive band gap breaks record] October 28th, semiconductors with wider band gaps can make electronic products smaller, more efficient, and able to withstand higher voltages. But the wider the band gap, the more difficult it is to control the material's conductivity. A research team led by Cornell University in the United States has proven that incorporating silicon into an aluminum gallium oxide film can maintain stable conductivity control capabilities even with a wider band gap than any previous semiconductor. The relevant paper was published in the new issue of Nature magazine.
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