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[New gallium nitride transistor has a voltage resistance of nearly 4,000 volts] On September 3, researchers at the Ecole Polytechnique Fédérale de Lausanne in Switzerland developed a new gallium nitride transistor with a voltage resistance of nearly 4,000 volts while maintaining low resistance. This device is expected to be used in high-voltage power electronics fields such as artificial intelligence (AI) data centers, renewable energy systems, and electric vehicles. Relevant research was published in the new issue of the journal Nature Electronics.
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