Micron has launched a new 16GbDDR5DRAM for server and PC memory applications, using 1β node with speeds up to 7200MT/s. An official press release stated that Micron Technology’s 16GbDDR5 memory extends its industry-leading 1β (1-beta) process node technology with speeds of 7200MT/s and is now shipping to all data center and PC customers.
Micron's 1β-based DDR5 memory uses advanced high-K value CMOS device technology, 4-phase clock and clock synchronization technology. Compared with the previous generation product, the performance is improved by up to 50% and the performance per watt is improved by 33%.
As the number of CPU cores increases to meet the demands of data center workloads, the need for higher memory bandwidth and capacity also increases significantly to overcome the "memory wall" challenge while optimizing customers' total cost of ownership.
The high-volume production and availability of 1βDDR5 DRAM for client and data center platforms also marks an important milestone for the industry. 1βDDR5 DRAM allows computing power to scale with higher performance, enabling applications such as artificial intelligence (AI) training and inference, generative AI, data analytics and in-memory databases (IMDB) across data centers and client platforms. The new 1βDDR5 DRAM product line offers current module densities and speeds from 4800MT/s to 7200MT/s for data center and client applications.
Micron's 1β technology enables Micron to offer a broad portfolio of memory-based solutions, including DDR5RDIMM and MCRDIMM using 16Gb, 24Gb and 32Gb DRAM chips, LPDDR5X, HBM3E and GDDR7 using 16Gb and 24Gb DRAM chips. The new Micron 16GbDDR5 memory products will be available through direct sales and channel partners.
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