Last month, Samsung quietly launched the BM1743 enterprise-class QLC solid-state drive with a capacity of 61.44TB. At the FMS2024 exhibition, the company displayed a larger 122.88TB version of the solid-state drive and also conducted some benchmark tests. Compared with the previous generation product, the I/O performance of BM1743 has been improved by 4.1 times, the data retention rate has been improved, and the energy efficiency of continuous writing has been improved by 45%.
The 128TB QLC SSD has a sequential read speed of 7.5GB/s and a write speed of 3GB/s. Random read IOPS is 1.6 million, while 16KB random write IOPS is 45,000. Based on the quoted random write access granularity, Samsung appears to be using 16KB indirect units (IUs) to optimize flash memory management. This is a similar strategy to Solidigm's strategy of using larger than 4K IUs in its high-capacity SSDs.
The benchmark test record of the company's PM9D3a 8-channel 5th generation solid-state drive was also displayed on site.
This SSD series is a mainstream choice for data centers, with sequential read speeds of up to 12GB/s and write speeds of up to 6.8GB/s. The random read speed is 2MIOPS and the random write speed is 400KIOPS.
The drive is available in multiple form factors with a maximum capacity of 32TB (M.2 tops out at 2TB), and its firmware includes optional support for Flexible Data Placement (FDP) to help resolve write amplification issues.
PM1753 is Samsung’s current enterprise-class SSD flagship product. This U.2/E3.S solid-state drive supports 16 NAND channels, has a capacity of up to 32TB, and has nominal sequential read and write speeds of 14.8GB/s and 11GB/s respectively. The random read and write speeds of 4KB access are 3.4M and 600KIOPS respectively.
Samsung claims that compared with the previous generation product (PM1743), this TLC solid-state drive has 1.7 times higher performance and 1.7 times higher energy efficiency, making it suitable for artificial intelligence servers.
The 9th generation V-NAND wafer is also available for viewing, but photography is prohibited. Mass production of this flash memory will begin in April 2024.