The development of China’s domestic extreme ultraviolet (EUV) lithography machines is far from being out of reach. The latest system currently being tested at Huawei's Dongguan factory uses laser-induced discharge plasma (LDP) technology, representing a potentially disruptive method of generating extreme ultraviolet light. The system is scheduled for trial production in the third quarter of 2025 and mass production in 2026, which may allow China to break ASML's technology monopoly in the field of advanced lithography technology.
The LDP method used in the Chinese system produces 13.5nm EUV radiation by evaporating tin between electrodes and converting it into a plasma through a high-voltage discharge, where electron-ion collisions create the desired wavelength. This approach offers several technical advantages over ASML's laser-produced plasma (LPP) technology, including simplified structure, reduced footprint, improved energy efficiency and potentially lower production costs.
The LPP method relies on high-energy lasers and complex FPGA-based real-time control electronics to achieve the same effect. While ASML has been improving its LPP-based systems for decades, the inherent efficiency advantages of the LDP approach may speed up China's catch-up in this key semiconductor manufacturing technology.
When the United States imposed sanctions on Chinese companies' EUV shipments, China's semiconductor development was severely restricted because standard deep ultraviolet (DUV) wave lithography systems use 248nm (KrF) and 193nm (ArF) wavelengths for semiconductor patterning, with 193nm immersion technology representing the most advanced pre-EUV production technology. These longer wavelengths are in stark contrast to the 13.5nm radiation of EUV and require multiple patterning techniques to enable advanced nodes.
However, Huawei's system still must answer questions such as resolution capabilities, throughput stability, and integration with existing semiconductor manufacturing processes. However, the commercialization of alternative EUV lithography tools will challenge ASML's position. ASML最新的高纳秒级超紫外光刻设备造价约为3.8亿美元。 For China's R&D centers, regardless of cost, Huawei's EUV equipment will provide a much-needed upgrade path for old-fashioned DUV lithography machines, which have previously restricted domestic chip production. Although China has developed solid intellectual property, it has made limited progress in tool manufacturing.
Leading fabs such as SMIC are working with Huawei to integrate EUV lithography machines into existing workflows. Robust semiconductor manufacturing workflows take years to establish, so we'll need to be patient before we see the results.