[Samsung announces next-generation memory strategy: HBM5 performance target is doubled to HBM4E] "Science and Technology Innovation Board Daily" reported on the 1st that Samsung Electronics plans to increase the performance of the next-generation high-bandwidth memory (HBM) HBM5 to 2 times that of HBM4E, and the performance target of the subsequent generation product zHBM will reach 8 times that of HBM4E. Samsung will focus on 3D structure innovation to compete for dominance in the next-generation memory market. In response to the large-capacity memory requirements required for large language models (LLM), Samsung is also advancing the development of zNAND-O. The goal of zNAND-O is to increase the bit density to 10 times that of DRAM while increasing the read bandwidth and energy efficiency to 7 times that of NAND. Samsung plans to start sample supply of zNAND-O in 2028. (ETNews)