Micron announced that DDR5 DRAM memory chips based on the latest 1γ nanometer process have been put into production, performance, energy efficiency, density and other indicators have been greatly improved. The node process in the DRAM memory industry has not been marked with specific values;1a, 1b, 1c, 1α, 1β, 1γThis iteration sequence becomes more and more advanced, with 1a closer to 20nm and 1γ closer to 10nm.
This is the first time that Micron Memory has used EUV extreme ultraviolet lithography process, Samsung and SK Hynix have already used it, but Micron has also introduced the next generation HKMG metal gate technology this time, and it is expected that a new BEOL back-end process will be used.
However, Micron did not disclose how many EUV lithography layers were used. It is speculated that EUV is only used on key layers. Otherwise, multiple exposures will be required, which increases time and cost.
Micron's 1γDDR5 has a single capacity of 16Gb (2GB), which can easily form an enterprise-level product with a single capacity of 128GB., claiming that the capacity density is increased by 30% again compared to 1β. In fact, each previous generation of improved technology can increase the density by 30%.
It only requires a standard voltage of 1.1V to reach an ultra-high frequency of 9200MHz (strictly speaking, 9200MT/s), and the common high-frequency memory currently on the market often has a high voltage of 1.35V or even 1.45V.
Lower voltage is not only safer, but also saves power consumption, which is claimed to be up to 20% lower than that of the 1β process.
At present, Micron 1γDDR5 memory is only produced in Japanese factories, and production capacity will be gradually expanded in the future. Related products are expected to be launched around the middle of this year.
In the future, Micron's factories in Taiwan will also introduce EVU and use the 1γ process to manufacture GDDR7 video memory and LPDDR5X high-frequency memory (up to 9600MHz).