The technology replaces traditional capacitors with ferroelectric hafnium oxide (HfO₂) elements, enabling long-lasting storage without the need for power while maintaining nanosecond access times. This hybrid technology addresses the performance gap between high-speed DRAM and storage-class memory such as NAND flash.
Unlike Infineon and Qimonda's previous DRAM joint ventures in Europe that failed to meet the economic requirements of commodity memory, FMC is targeting professional applications that value durability and energy efficiency. The HfO₂-based approach addresses the limitations of previous FeRAM memory implementations using lead zirconate titanate (PZT), which were unable to scale beyond megabytes of capacity.
Prototypes now demonstrate gigabit-range densities that are compatible with sub-10nm manufacturing processes for conventional DRAMs made by Micron, Samsung, SK Hynix and others. By eliminating refresh cycles, DRAM+ significantly reduces static power consumption compared to traditional single-transistor/single-capacitor DRAM cells. Key applications include AI accelerators requiring persistent model weights, automotive ECUs with instant-on requirements, and power-constrained medical implants.
Neumonda will contribute its suite of test platforms, Rhinoe, Octopus and Raptor, for electrical characterization and analysis at lower capital costs than standard semiconductor test equipment. The production schedule for commercial DRAM+ products has not yet been announced.