Winbond Electronics officially announced the launch of a new 8Gb DDR4 DRAM. This product uses Winbond’s own advanced 16nm process technology to provide higher speed, lower power consumption and more cost-effective solutions.It is suitable for diverse markets such as TVs, servers, network communication equipment, industrial computers and embedded applications.
Thanks to the 16nm process, the new generation of DDR4 products has achieved important breakthroughs in performance. Compared with previous generation technology, this process has smaller die size, higher wafer yield and better energy efficiency, helping customers integrate higher capacity DRAM without changing the package size.
Process optimization also improves signal integrity, reduces leakage rate, and ensures that the product maintains stable operation at data transmission rates up to 3600Mbps.
As the industry's first DDR4 product to support 3600Mbps transmission rate, Winbond 8Gb DDR4 DRAM surpasses the existing DDR4 standard and can meet the data processing needs of high-speed computing applications. With the chip area reduction brought by 16nm technology, this product can provide greater capacity in the same package, helping to further reduce the overall system cost.
Winbond Electronics has its own full-process capabilities from design, 16nm process development to manufacturing, and can provide reliable supply chain support and professional after-sales services to industrial customers and KGD (good bare wafer) users.
Based on the same 16nm process platform,Winbond is also simultaneously developing three other DRAM products, including CUBE, 8Gb LPDDR4 and 16Gb DDR4, to further expand its next-generation memory product layout.
