[Changxin’s new technological breakthrough: 4F² architecture products are expected to be unveiled by the end of the year] According to the Science and Technology Innovation Board Daily on the 10th, a reporter from the Science and Technology Innovation Board Daily learned that Changxin Memory’s 4F² DRAM architecture research and development has recently made key progress. The company's president, Dr. Cao Kanyu, delivered a speech at the 4th Integrated Chip and Core Chip Conference, comprehensively introducing Changxin Memory's technological exploration and accumulation in DRAM devices, 4F² architecture and hybrid bonding, and officially announced that it expects to launch a new generation of DDR5 RDIMM products incorporating the above-mentioned advanced technologies by the end of the year.