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[Infineon will invest 1.1 billion euros in the Austrian factory to mass-produce 300 mm wafer gallium nitride power semiconductors] On October 27, Infineon announced on October 27 that it will establish the world's first large-scale production base for new generation gallium nitride (GaN) power semiconductors based on 300 mm wafers in Europe. As part of the project, Infineon plans to invest approximately 1.1 billion euros in existing cleanroom facilities at the Villach plant in Austria by 2034, aiming to use existing and upgraded infrastructure to achieve capacity expansion. The base is planned to be put into production by the end of 2027.
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