[Infrared imaging chip preparation Chinese team made important progress] On October 30th, the chip with the circuit ready was immersed in a normal temperature water solution, and the infrared photosensitive material "grew" directly on the surface of the chip. On October 28, Professor Tang Jiang’s team from the School of Optics and Electronic Information of Huazhong University of Science and Technology and the Wuhan National Research Center for Optoelectronics published a research result online in Nature magazine. They used a room temperature aqueous solution process to grow the lead sulfide photosensitive layer directly on the readout circuit to create a 640×512 pixel short-wave infrared imaging chip. Tests show that the photodiode developed by the team has a specific detection rate (a measure of the ability to capture weak light signals) of 2.5 micron infrared light at room temperature, reaching the highest level of similar devices, higher than commercial indium gallium arsenic detectors of the same wavelength. The uniformity of the response of each pixel of the imaging chip is comparable to that of commercial indium gallium arsenide chips. Without cooling or supplementary light, infrared images of hot water, soldering irons and other high-temperature objects of 80 degrees Celsius to 600 degrees Celsius were clearly captured. The process can also be used to create flexible circuits to create bendable imaging arrays.