[Chinese scientific research team provides new way to solve the problem of durability of ferroelectric materials] On September 11, according to Xi’an University of Electronic Science and Technology, academician Hao Yue’s team from the school, together with relevant scholars from City University of Hong Kong and Fudan University, made new breakthroughs in the research on the failure phenomenon of ferroelectric materials, providing a new way to solve the problem of durability of ferroelectric materials. On the 11th, the relevant results were published in the international academic journal Science. According to reports, this research connects atomic-scale defect behavior and device-scale reliability performance, provides a new physical basis for the development of highly reliable and high-density wurtzite ferroelectric memories, and also provides a followable regulatory path for ferroelectric materials.