[Chinese scientific research team realizes angstrom-level atomic slippage, which can induce tens of millions of times of resistance change] September 11th, only a tiny slip of the atomic layer on the angstrom level, that is, 0.1 nanometer scale, can induce tens of millions of times of resistance change. The scientific research team of the Institute of Semiconductors, Chinese Academy of Sciences, has overcome the industry problem of balancing high on-off ratio and high durability of slip ferroelectric tunneling junctions through two-dimensional van der Waals heterojunction interface engineering. According to scientific researchers, if large-scale device arrays and supporting circuits are improved in the future, such devices are expected to achieve faster data storage and computing with lower power consumption, and can be applied to terminal hardware such as mobile phones and computers. It will provide new technical solutions to alleviate the contradiction between increasing computing power and limited power consumption and promote the implementation of a new computing architecture that integrates storage and computing. The relevant results were published in the international academic journal "Science" on September 11.