Abstract:
Micron plans to double its high-bandwidth memory (HBM) production capacity compared with last year. The company will promote radical equipment investment before the end of the year to strengthen the supply capacity of the new generation HBM - HBM4 12-layer products. This move is intended to make up for HBM's shortcomings in production capacity compared with Samsung Electronics and SK Hynix and increase market share.
According to industry news on the 3rd, Micron plans to increase HBM production capacity (based on wafers) by up to 60,000 pieces per month by the end of this year. Micron's monthly HBM production last year remained at 4-50,000 pieces, and this year's net increase will exceed last year's original production capacity.
An industry insider familiar with the relevant business said: "Micron is making large-scale equipment investments to rapidly increase HBM4 production capacity. By the end of this year, it will achieve an HBM production capacity of approximately 100,000 pieces per month."
In order to achieve the above-mentioned production capacity goals, Micron is increasing purchase orders (PO) to a number of HBM manufacturing equipment manufacturers. It is understood that equipment at Micron's HBM production base is continuing to enter the market.
It is expected that the proportion of HBM4 12-layer output will increase significantly. At present, most of Micron's HBM output is HBM3E 12-layer. At the beginning of this year, HBM4 12-layer accounted for only 20%-30% of the overall production. It is reported that this proportion will increase to up to 50% by the end of the year.
The HBM412 layer will be installed on Vera Rubin of Nvidia, the world’s leading AI chip company. Micron has started mass production of HBM4 12-layer in the second quarter of this year.
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