Abstract:
At the 2026 World Manufacturing Conference in Hefei, Changxin Technology officially announced the mass production of the fifth-generation DRAM technology platform (G5 platform), simultaneously exhibited large-capacity LPDDR5X products based on the platform, and publicly demonstrated mass-produced LPDDR6 memory for the first time.
The core breakthrough of the G5 platform lies in process shrinkage. This platform relies on Quadruple Patterning technology to shrink the half-pitch of the active area of the memory array to 11.95 nanometers, which is close to the world's top memory mass production platform process.
As a reference, Samsung’s current most advanced DRAM node is 12nm, and the 11.95nm of Changxin G5 is comparable to Samsung’s mass production level. The key is that this breakthrough was achieved using ArF immersion DUV without relying on EUV lithography machines.
In addition to line width shrinkage, the G5 platform has also improved the storage capacitor aspect ratio to 45:1 by changing the process flow and using new materials, and developed a high-dielectric constant metal gate (HKMG) process adapted to the DRAM process, reducing the height of the core functional area to 6762 nanometers.
Storage density has thus been improved by leaps and bounds. The number of die produced per wafer is at least 50% higher than that of the previous generation platform, which has significant advantages in product energy efficiency and cost control. Luo Xiaodong, Vice President of Changxin Technology, said,
The process level of the G5 platform is comparable to the industry's top mass production nodes.
The two LPDDR5X mass-produced products on display simultaneously have a single capacity of 24Gb, which is 50% higher than the previous generation of similar products. They are packaged in 496Ball and 245Ball respectively. They are suitable for mid-to-high-end smartphones and portable consumer electronics. They have now entered the stage of large-scale mass production.
Another focus at the conference was the mass-produced LPDDR6. Changxin LPDDR6 officially announced mass production on August 29, with a maximum transmission rate of 12800Mbps, a 60% increase in bandwidth compared to LPDDR5X, a 20% reduction in power consumption, and a maximum chip capacity of 16GB.
The first model equipped with LPDDR6 is the Xiaomi 18 Fold folding flagship mobile phone. This is the first time that LPDDR6 products have been commercialized on a flagship mobile phone in the world. It also marks the first time that a Chinese storage company has achieved the world's first mass production of high-end memory standards.
In addition,
Nubian NaviX Ultra, a "beanbag phone" equipped with Changxin's highest speed 10667Mbps LPDDR5X, has also been put on sale. This is the first mass production application of a domestic 10667Mbps high-speed LPDDR5X chip.
It should be pointed out that Changxin admitted in the announcement that the G5 platform, as a brand-new platform, still needs a certain period of time to ramp up the yield. Products based on this platform have not yet formed large-scale sales and will not have a significant impact on operating performance in the short term.
But the strategic significance of G5 mass production is clear enough: domestic DRAM is changing from a "chaser" to a "competitor" in terms of the most advanced mass production technology.
Comments