Abstract:
The latest tracking report released by market research organization Counterpoint Research shows that China's memory chip leader Changxin Memory (CXMT) has experienced explosive growth in the global dynamic random access memory (DRAM) market, and its revenue scale has jumped to 10% of the global market share. With strong performance, Changxin Memory is firmly occupying the position of the world's fourth largest DRAM supplier and further narrowing the gap with industry leaders.
The sharp surge in this round of performance is mainly due to the tight global memory supply caused by the construction of artificial intelligence infrastructure. As major technology giants increase their deployment of computing power in AI data centers, the market has not only surged in demand for high-bandwidth memory (HBM) used in AI accelerators, but also in the demand for general-purpose DRAM used in servers. Against this background, the top three players in traditional industries such as Samsung Electronics, SK Hynix and Micron Technology have successively shifted their production capacity to high value-added HBM and high-specification products, which directly led to the tightening of DDR4 and DDR5 DRAM production capacity supply for the general market and a sharp increase in product prices. As an important supplier of mainstream general-purpose DRAM, Changxin Memory has seized the opportunity of the industry's supply and demand gap to comprehensively expand its shipment scale and reap product premiums, driving its revenue and net profit to show a strong momentum of exponential growth.
Prior to this, Changxin Memory had achieved extremely high annual revenue growth in the second quarter of this year, becoming the fastest growing memory chip manufacturer in the world. With its successful listing on the Shanghai Stock Exchange and completion of large-scale fundraising, Changxin Storage has become one of the technology companies with the largest market capitalization in China's capital market. Currently, the company is using the abundant funds and profits accumulated from the prosperity of the general DRAM market to accelerate production capacity expansion and technology research and development for high-bandwidth memory (HBM) and next-generation mobile memory (LPDDR), aiming to further enhance the supply capacity of domestic and foreign markets and accelerate the pace of catching up with global industry giants in the field of cutting-edge storage technology.
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