Abstract:
According to "The Information" report, Chinese memory giant Changxin Memory (CXMT) has begun small batch production of HBM3E memory. This means that Chinese memory manufacturers are still about two generations behind Korean companies that are gradually switching to HBM4E production. However, this is still an important milestone for Changxin Storage.
CX Memory is expected to achieve a manufacturing capacity of approximately 350,000 DRAM wafers per month by the end of this year, and plans to continue to expand production capacity in the next few years. At present, the production scale of HBM3E is still very limited, indicating that related manufacturing has just entered the risk trial production stage.
Although Changxin Memory has not announced the specific specifications of its HBM3E memory, according to the JEDEC standard, the product should use 1024-bit bit width and a single-pin transmission rate between 9.2 Gbps and 12.4 Gbps. The target rate for most standard configurations is 9.6 Gbps. The total bandwidth is about 1.2 TB/s, and the capacity can vary depending on the stacking method: 24 GB when using 8-layer stacking, and 36 GB when using 12-layer stacking, both based on a single-layer 24 Gb DRAM chip.
Given Changxin Memory’s rapid progress from risk trial production to mass production, its HBM3E product may enter the large-scale manufacturing stage in just a few weeks.
In addition, Changxin Storage has outstanding performance in the speed of clean room construction. Its wafer fab clean room can be built in only about 12 months, while other manufacturers usually take about two years. Currently, Changxin Memory operates multiple production facilities, including two 12-inch wafer fabs in Hefei and Beijing, each with a monthly production capacity of approximately 100,000 wafers. Therefore, the company's current total production capacity is approximately 200,000 wafers per month.
In the future, as relevant factories in Shanghai and Hefei are completed and put into full operation, Changxin Memory plans to increase its monthly production capacity to approximately 600,000 pieces, which is equivalent to three times the current level. However, it is unclear how much of that capacity will be used to produce HBM memory.
Since the production of one HBM memory stack requires the use of multiple DRAM die, if the demand for HBM continues to grow and Changxin Memory invests more resources in HBM production, the supply situation of ordinary DRAM memory may not be significantly improved.
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