Since Changxin Memory launched DDR5 memory in a low-key manner, more insider information has been unearthed, and good news has continued one after another. Even the second-generation HBM2 high-bandwidth memory has made major breakthroughs. According to an analysis report by Citibank,Changxin's initial yield rate on DDR4 was only 20-30%, and it reached 90% after maturity.
Thanks to the rich experience in DDR4,The yield rate of Changxin DDR5 has been 40% from the beginning. It is currently stable at around 80% and continues to improve. It is expected to increase to around 90% by the end of next year.
Changxin currently has two memory factories in Hefei. Fab1 mainly produces DDR4, using the 19nm process, with a monthly production capacity of about 100,000 wafers.
Fab2 focuses on DDR5 and uses a 17nm process. Its current monthly production capacity is about 50,000 wafers, which is still improving and is expected to double by next year.
Of course, the DDR5 memory of Samsung, SK Hynix, etc. has been upgraded to the 12nm process, so Changxin still has a lot of room for improvement.
also,Changxin is also vigorously promoting HBM high-bandwidth memory. On the one hand, it has increased the production capacity of the first-generation HBM. On the other hand, the second-generation HBM2 has made major breakthroughs and is sending samples to customers. It is expected that small-scale mass production will be possible in the middle of next year.
Although the three major original manufacturers have already mass-produced HBM3 and HBM3E, and will soon launch HBM4, for Changxin, being able to handle HBM2 is still a milestone and is crucial to the development of localized AI hardware, such asHuawei's Ascend 910 series accelerators rely on HBM2.
According to earlier reports, Changxin began purchasing HBM2 production equipment from the third quarter of this year, especially those that require more advanced packaging technology, including TSV, KGSD, etc.